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  • MT16JTF51264HZ-1G4 | Micron Technology | Micron 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDIMM 1.35V Low Voltage Dual Rank Memory Module
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    MT16JTF51264HZ-1G4 | Micron Technology | Micron 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDIMM 1.35V Low Voltage Dual Rank Memory Module

    Micron Technology

    Price $58.72
    $53.38
    (You save $5.34 )
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    SKU:
    MT16JTF51264HZ-1G4
    Availability:
    In Stock
    Weight:
    2.00 LBS
    Shipping:
    Calculated at Checkout
    Package Type:
    Retail
    Package Quantity:
    1
    Memory Capacity:
    4 GB
    Memory Technology:
    DDR3 SDRAM
    Product Voltage:
    1.35 V DC
    RAM Speed:
    1600 MHz
    RAM Standard:
    DDR3-1600/PC3-12800
    Error Identifying:
    Non-ECC
    Column Access Strobe (CAS):
    CL11
    Rank:
    Dual
    Signal Type:
    Unbuffered
    RAM Genre:
    SoDIMM
    Quantity of Pins:
    204-pin
    Eco Friendly:
    Yes
    Compliance Standards:
    RoHS
    Assembly Required:
    Yes

    Product Description

    MT16JTF51264HZ-1G4 | Micron Technology | Micron 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDIMM 1.35V Low Voltage Dual Rank Memory Module

    Product Videos

    Custom Field

    Package Type Retail
    Package Quantity 1
    Memory Capacity 4 GB
    Memory Technology DDR3 SDRAM
    Product Voltage 1.35 V DC
    RAM Speed 1600 MHz
    RAM Standard DDR3-1600/PC3-12800
    Error Identifying Non-ECC
    Column Access Strobe (CAS) CL11
    Rank Dual
    Signal Type Unbuffered
    RAM Genre SoDIMM
    Quantity of Pins 204-pin
    Eco Friendly Yes
    Compliance Standards RoHS
    Assembly Required Yes

    Product Reviews

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    MT16JTF51264HZ-1G4 | Micron Technology | Micron 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDIMM 1.35V Low Voltage Dual Rank Memory Module

    MT16JTF51264HZ-1G4 | Micron Technology | Micron 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDIMM 1.35V Low Voltage Dual Rank Memory Module

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