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  • MT8KTF51264HZ-1G6E2 | Micron Technology | Micron 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDIMM 1.35V Low Voltage Memory Module
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    MT8KTF51264HZ-1G6E2 | Micron Technology | Micron 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDIMM 1.35V Low Voltage Memory Module

    Micron Technology

    Price $59.59
    $48.45
    (You save $11.14 )
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    SKU:
    MT8KTF51264HZ-1G6E2
    Availability:
    In Stock
    Weight:
    2.00 LBS
    Shipping:
    Calculated at Checkout

    Product Description

    MT8KTF51264HZ-1G6E2 | Micron Technology | Micron 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDIMM 1.35V Low Voltage Memory Module

    Product Details

    Memory Size:
    4GB
    Memory Standard:
    DDR3 SDRAM
    Memory Speed:
    DDR3-1600MHz
    Bus Type:
    PC3-12800
    Error Checking:
    Non-ECC
    Signal Processing:
    Unbuffered
    RAM Genre:
    SODIMM
    CAS Latency:
    CL11
    Memory Voltage:
    1.35V
    Number of Pins:
    204-Pin
    Memory Rank:
    Single Rank x 8 (1Rx8)
    Device Supported:
    Notebook
    Number of Modules:
    1 x 4GB

    Product Videos

    Custom Field

    Memory Size 4GB
    Memory Standard DDR3 SDRAM
    Memory Speed DDR3-1600MHz
    Bus Type PC3-12800
    Error Checking Non-ECC
    Signal Processing Unbuffered
    RAM Genre SODIMM
    CAS Latency CL11
    Memory Voltage 1.35V
    Number of Pins 204-Pin
    Memory Rank Single Rank x 8 (1Rx8)
    Device Supported Notebook
    Number of Modules 1 x 4GB

    Product Reviews

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    MT8KTF51264HZ-1G6E2 | Micron Technology | Micron 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDIMM 1.35V Low Voltage Memory Module

    MT8KTF51264HZ-1G6E2 | Micron Technology | Micron 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDIMM 1.35V Low Voltage Memory Module

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